Semiconductor device and method of manufacturing the same

ABSTRACT

A p-type base layer is selectively formed on a surface of an n-type drift layer; an n-type source layer is selectively formed on a surface of the p-type base layer; and a p-type contact layer is formed to be in contact with the selectively-formed n-type source layer. A p-type counter layer is formed to be in contact with the n-type source layer, so as to overlap the p-type contact layer, so as to be separated from an interface where the p-type base layer and the gate oxide film are in contact with each other, and to be shallower than the p-type base layer. Accordingly, switching destruction caused by process defects in an insulated gate semiconductor device is reduced.

TECHNICAL FIELD

The present invention relates to a semiconductor device and a method ofmanufacturing the same, and more particularly, to a semiconductor devicesuch as an insulated gate semiconductor device used for a powerconversion apparatus such as an inverter for driving a motor and amethod of manufacturing the same.

BACKGROUND ART

In the proceeding of low power consumption of a power conversionapparatus, low power consumption of a power device performing animportant function in the power conversion apparatus has been demanded.Particularly, since an insulated gate transistor (MOSFET) or aninsulated gate bipolar transistor (IGBT) of which gate can be driven bya voltage can be easily treated, application fields have been greatlywidened.

The MOSFET and the IGBT have a built-in parasitic structure. In otherwords, the MOSFET is a parasitic bipolar transistor (NPN structure), andthe IGBT is a parasitic thyristor (PNPN structure). Particularly, in thecase of the IGBT, since the IGBT includes a parasitic thyristor, if theparasitic thyristor operates, although electron injection from aninversion layer of the MOS gate is stopped by setting the gate voltageto a threshold value or less, the electrons continues to be injectedthrough other paths from an n-type source layer into a p-type baselayer. This phenomenon is called latch-up. When the gate is in aturned-on state or at a turned-off time, if the latch-up occurs, thecontrollability of the gate voltage is lost, and in the worst case, thedevice may be destructed.

As measures to suppress the destruction caused by the latch-up, there isa method of forming a p-type contact layer having a concentration higherthan that of a p-type base layer in an inner portion of the p-type baselayer constituting the MOS gate. FIG. 26 is a cross-sectional view fordescribing operations of a semiconductor device in the related art. FIG.26 illustrates cross sections illustrating only the extracted portion ofthe gate structure of the IGBT or the MOSFET. FIG. 26( a) illustrates across section in the case where only the p-type base layer 64 is ap-type layer. FIG. 26( b) illustrates a cross section in the case wherea p-type contact layer 66 having a concentration higher than that of ap-type base layer 64 is formed on a surface of the p-type base layer 64.

In FIG. 26( a), in a turned-on state or at a turned-off time, holesflowing into the p-type base layer 64 pass through a region between then-type source layers 65 to an emitter electrode (not illustrated) as ahole flow 17. Although the hole flow 17 illustrated as a rectangularshape in FIG. 26( a) for the convenience of illustration, actual holesflow in a curve according to acceptor concentration distribution orelectrostatic potential distribution.

In this manner, when the holes flow in an inner portion of the p-typebase layer 64, large voltage drop occurs due to a resistance component16 of the p-type base layer 64. If the voltage drop is larger than abuilt-in potential of pn junction between the n-type source layer 65 andthe p-type base layer 64, a forward-biased voltage is generated at thepn junction, so that electrons are injected into the p-type base layer64 through a path different from the MOS gate. As a result, electroninjection at the MOS gate may not be controlled. In FIG. 26, an emitterelectrode is denoted by reference numeral 72.

On the other hand, in FIG. 26( b), since the p-type contact layer 66having a concentration higher than that of the p-type base layer 64 isformed in an inner portion of the p-type base layer 64, the magnitude ofthe resistance component 16 in the inner portion of the p-type baselayer 64 is decreased due to the p-type contact layer 66. Therefore,even in the case where a larger current flows, the voltage drop due tothe current can be suppressed to be equal to or lower than the built-inpotential of the pn junction between the n-type source layer 65 and thep-type base layer 64.

As a result, it is possible to prevent a parasitic thyristor or aparasitic bipolar transistor from operating. In FIG. 26( b), aninterlayer insulating film is denoted by reference numeral 9; a gateoxide film is denoted by reference numeral 10; a polysilicon electrodeis denoted by reference numeral 11; and an n-type drift layer is denotedby reference numeral 61.

In addition, in the related art, there is a structure of forming ap-type high concentration layer in a lamination shape which is formed inan inner portion of the p-type base layer 64 to be in contact with thep-type contact layer 66 in order to prevent the parasitic thyristor orthe parasitic bipolar transistor from operating (for example, refer topatent Document 1 listed below). FIG. 25 is a cross-sectional viewillustrating main components of a semiconductor device in the relatedart. FIG. 25 illustrates a cross section of a planar gate IGBT where thep-type high concentration layer is formed.

As illustrated in FIG. 25, in addition to the p-type contact layer 66, ap-type high concentration layer 28 is formed in an inner portion of thep-type base layer 64 in a lamination shape so as to be separated fromthe n-type source layer 65, so that resistance distribution according tocarrier transport is alleviated. In addition, patent Document 1discloses a method of forming the p-type high concentration layer 28 bya high acceleration voltage ion implantation method and thermaltreatment.

On the other hand, in the related art, there are a technique of a trenchgate-type IGBT including a p-type high concentration layer 28 which isformed in an inner portion of a p-type base layer to be in contact witha p-type contact layer (for example, refer to FIG. 4 in patent Document2 listed below) and a technique of an IGBT including a deep p-type welllayer 26 in an inner portion of a p-type base layer 64 (for example,refer to patent Document 3 listed below). In FIGS. 25 and 27, an n-typefield stop layer is denoted by reference numeral 2; a p-type collectorlayer is denoted by reference numeral 3; and a collector electrode isdenoted by reference numeral 13.

FIG. 27 is a cross-sectional view illustrating main components of asemiconductor device in the related art. FIG. 27 illustrates a crosssection of the aforementioned IGBT. A deep p-type well layer 26 isinstalled in an inner portion of the p-type base layer 64 including thep-type contact layer 66. In FIG. 27, the deep p-type well layer 26 alsohas the same function as the aforementioned p-type high concentrationlayer 28, so that the effect of reducing the resistance component of thepath through which the holes flow can be obtained.

CITATION LIST Patent Document

-   Patent Document 1: JP 2001-135817 A-   Patent Document 2: JP 2001-308328 A-   Patent Document 3: JP 2007-511913 A

DISCLOSURE OF THE INVENTION Problem to be Solved by the Invention

In the manufacturing of the IGBT or the MOSFET, a large number ofprocesses such as a photolithography process and an etching process areneeded. Particularly, in the process of forming the p-type contact layer66 or the n-type source layer 65, ion implantation is performed by usingresist patterned by a photolithography process as a mask.

During the ion implantation, a localized pattern defect may occur in theresist which is used as the mask. In other words, due to particles suchas micro-particles generated during the processes or contaminants, dust,or the like according to resist residue, a defect where the resist isomitted at an unexpected site or a defect where the resist remains mayoccur. If the ion implantation is performed by using the resist havingthe localized pattern defect as a mask, the formation defect of thep-type contact layer 66 or the n-type source layer 65 occurs at thedefective site, and thus, the occurrence probability of the latch-updestruction is increased.

With respect to the cases of defects, specifically, there are thefollowing three types of defects.

(1) Defect according to intrusion of an unnecessary n-type source layerat the site where a p-type contact layer is formed (hereinafter,referred to as a pattern defect (1)).

(2) Defect according to omission of a p-type contact layer at the sitewhere an n-type source layer is not to be originally included(hereinafter, referred to as a pattern defect (2)).

(3) Defect according to the simultaneous occurrence of the patterndefects (1) and (2) (hereinafter, referred to as a pattern defect (3)).

Hereinafter, each pattern defect mentioned in pattern defects (1) to (3)will be described.

(Case of Pattern Defect (1))

FIG. 28 is a cross-sectional view illustrating a method of manufacturinga semiconductor device in the related art. FIG. 28 illustrates crosssections of a device in processes during the formation of the device.FIG. 28( a) illustrates a state where the gate oxide film 10, thepolysilicon electrode 11, and the p-type base layer 64 for the gatecontrol are formed on the surface of the n-type drift layer 61. In thestate illustrated in FIG. 28(a), a screen thermal oxidation film (notillustrated) of which thickness is almost equal to that of the gateoxide film 10 may be formed on the surface of the p-type base layer 64.

In this state, as illustrated in FIG. 28( a), arsenic ion implantation(refer to the arrow 19 in FIG. 28( a)) is performed by using thepolysilicon electrode 11 and the resist 8, which is patterned by aphotolithography process, as a mask. At this time, it is assumed thatthe resist 8 is not formed in the p-type base layer 64 on the left sideof the paper in FIG. 28( a) due to the particles or the like.

Next, after the resist of the previous process is removed, asillustrated in FIG. 28( b), the resist 8 is patterned again, and boronion implantation (refer to the arrow 18 in FIG. 28( b)) is performed byusing the resist 8 as a mask. Next, after the resist 8 is removed,thermal treatment is performed. Therefore, as illustrated in FIG. 28(c), the p-type contact layer 66 is formed.

However, as described above, in the upper portion of the left-sidep-type base layer 64, the n-type source layer 65 is formed on the entiresurface of the portion opened by the polysilicon electrode 11, and thep-type contact layer 66 is formed to be deeper than the n-type sourcelayer 65. Therefore, as illustrated in FIG. 28( c), the n-type sourcelayer 65 slightly remains in the upper portion of the p-type base layer64. In this manner, if the n-type source layer 65 is formed at the site(portion) where the n-type source layer 65 is not to be originallyformed, a defect occur in characteristics.

FIG. 31 is a cross-sectional view for describing operations of asemiconductor device in the related art. FIG. 31 illustrates the holeflow in the turned-on state or at the turned-off time and the resistancecomponent of the p-type base layer in the semiconductor device of therelated art. FIG. 31( a) illustrates operations of the semiconductordevice in the case of the pattern defect (1) in the description. Asillustrated on the right side of FIG. 31( a), in the case where theresist is patterned according to a pattern of a photomask, the p-typecontact layer 66 is formed on the surface of the p-type base layer 64.In addition, the hole flow 17 in the turned-on state or at theturned-off time passes through the region where the resistance of theresistance component 16 is low.

However, as illustrated on the left side of FIG. 31( a), if the resistmask in the arsenic ion implantation period is omitted and the surfaceof the p-type base layer 64 is covered with the n-type source layer 65,the hole flow 17 is blocked by the n-type source layer 65, so that theholes may not flow out to the emitter electrode (not illustrated). Ifthe holes may not flow out to the emitter electrode, the voltage of thepn junction between the p-type contact layer 66 and the n-type sourcelayer 65 in the turned-on state or at the turned-off time exceeds abuilt-in potential (about 0.7 V), so that electrons are injected fromthe n-type source layer 65 through the p-type contact layer 66 into thep-type base layer 64 separately from the MOS gate. As a result, aparasitic thyristor or a parasitic bipolar transistor operates, andthus, the latch-up occurs, so that the current on/off control is not anymore performed in the MOS gate.

(Case of Pattern Defect (2))

FIG. 29 is a cross-sectional view illustrating a method of manufacturinga semiconductor device in the related art. FIG. 29 illustrates crosssections of the device in the processes during the device formation.FIG. 29( a) illustrates a state where the gate oxide film 10, thepolysilicon electrode 11, and the p-type base layer 64 for gate controlare formed on the surface of the n-type drift layer 61.

In the state illustrated FIG. 29( a), the arsenic ion implantation(refer to the arrow 19 in FIG. 29( a)) is performed by using thepolysilicon electrode 11 and the resist 8, which is patterned by aphotolithography process, as a mask. Next, after the resist of theprevious process is removed, as illustrated in FIG. 29( b), the resist 8is patterned again, and the boron ion implantation (refer to the arrow18 in FIG. 29( b)) is performed by using the resist 8 as a mask.

At this time, due to the particles or the like existing on the surfaceof the p-type base layer 64 on the left side of the paper in FIG. 29(b), the resist 8 is not exposed, and thus, after development, the resist8 remains. Accordingly, boron is not introduced into the left-sidep-type base layer 64, and the p-type contact layer 66 (before thermaltreatment) is not formed.

Subsequently, in the state where the p-type contact layer 66 is notformed, after the resist 8 is removed, thermal treatment is performed.Therefore, the final p-type contact layer 66 is formed in the p-typebase layer 64 illustrated on the right side of the paper in FIG. 29( c).On the other hand, the p-type contact layer 66 is not formed in thep-type base layer 64 illustrated on the left side of the paper in FIG.29( c).

In this manner, in the case where the p-type contact layer 66 is notformed at the site where the p-type contact layer 66 is to be originallyformed, the relation between the hole flow 17 and the resistancecomponent 16 is illustrated in FIG. 31( b). FIG. 31( b) illustratesoperations of the semiconductor device in the case of the pattern defect(2) of the description.

As illustrated on the left side of the paper in FIG. 31( b), if thep-type contact layer 66 which is to originally included is omitted, themagnitude of the resistance component 16 of the path of the hole flow 17in the portion just below the n-type source layer 65 is increased in theturned-on state or at the turned-off time. Therefore, the voltage dropin the path from the portion just below the n-type source layer 65 to anemitter electrode (not illustrated) exceeds a built-in potential (about0.7 V) of the pn junction between the p-type contact layer 66 and then-type source layer 65.

Therefore, similarly to the pattern defect (1), electros are injectedfrom the n-type source layer 65 through the p-type contact layer 66 intothe p-type base layer 64 separately from the MOS gate. Accordingly, thelatch-up locally occurs only in the p-type base layer 64 where theelectrons are injected, and a parasitic thyristor or a parasitic bipolartransistor operates, so that current on/off of the MOS gate may not becontrolled.

(Case of Pattern Defect (3))

FIG. 30 is a cross-sectional view illustrating a method of manufacturinga semiconductor device in the related art. FIG. 30 illustrates crosssections of the device in the processes during the device formation. Asillustrated in FIG. 30, in the case where the pattern defect (1) and thepattern defect (2) simultaneously occur, in the p-type base layer 64 onthe left side of the paper in FIG. 30( a), the resist 8 is omitted, andan unnecessary n-type source layer 65 which is not to be originallyformed is formed over the entire surface of the opening portion.

In addition, in the p-type base layer 64 on the left side of the paperin FIG. 30( b), the resist 8 remains, so that the p-type contact layer66 which is to be originally introduced is omitted. In this manner, inthe case where the pattern defect (1) and the pattern defect (2)simultaneously occur, the p-type contact layer 66 which is to beoriginally formed is not formed in the p-type base layer 64 (herein, thep-type base layer 64 on the left side of the paper), and the unnecessaryn-type source layer 65 is introduced over the entire surface of theopening portion of the polysilicon electrode 11.

In the case where, due to the occurrence of the pattern defect (3), thep-type contact layer 66 which is to be originally formed is not formedand the unnecessary n-type source layer 65 is introduced over the entiresurface of the opening portion of the polysilicon electrode 11, asillustrated in FIG. 31( c), similarly to the pattern defect (1), all theholes flow into the n-type source layer 65, so that the latch-up moreeasily occurs. Although the occurrence probability of the pattern defect(3) is low in comparison with the aforementioned pattern defects (1) and(2), the pattern defect (3) is a defect which may occur.

With respect to the three pattern defects described above, in theaforementioned structure of the related art illustrated in FIG. 25,although the p-type high concentration layer 28 is formed at such a deepposition that the p-type high concentration layer 28 is in contact withthe p-type contact layer 66, that the p-type high concentration layer 28is not in contact with the n-type source layer 65 in the depth.Therefore, in the p-type high concentration layer 28, for example, ifthe defect in the case of the pattern defect (1) occurs, the n-typesource layer may not be cancelled, and thus, there is a problem in thatthe effect of solving the defect is lowered.

In addition, in the aforementioned structure of the related artillustrated in FIG. 27, the diffusion depth of the p-type well layer 26is formed to be larger than the p-type base layer 64. The transversediffusion portion of the p-type well layer 26 in the depth needs to beconfigured not to reach the channel formation region so that the p-typewell layer 26 does not influence the gate threshold value. In addition,the process of forming the p-type well layer 26 needs to be performedprior to the gate oxide film 10, the polysilicon electrode 11, or thep-type base layer 64 so that the diffusion depth becomes deep.

In order not to allow the transverse diffusion portion of the p-typewell layer 26 to reach the channel formation region in the state wherethe p-type well layer 26 does not influence the gate threshold value,boron needs to be implanted in a region much narrower than the formationregion of the p-type base layer 64 on the outer surface of the n-typedrift layer 61, which is a difficult problem. Therefore, there is aproblem in that it is difficult to secure a region capable of cancellingthe n-type source layer in the p-type well layer 26 formed in such anarrow region with respect to the aforementioned pattern defect (1).

In addition, there is a problem in that the defects of the patterndefects (1) to (3) may not be detected in a so-called staticcharacteristic such as a resistant voltage, a leakage current, ONresistance, or an ON voltage. Therefore, there is a problem in that, thedevice with defects is transferred to an assembly process, anddestruction caused by the latch-up occurs during a final shipment testperiod. In this case, there is a problem in that packaging members orassembly and test processes also have defects, so that the loss is verybig. Particularly, in the case of a large-capacity module using aplurality of chips, the problem is very serious.

Recently, miniaturization has proceeded in order to producehigh-performance devices, and the gate structure thereof is changed fromthe planar structure of the related art to the trench structure.Therefore, a sensitivity of switching destruction with respect to theaforementioned defects is further increased. For example, with respectto a stripe-pattern trench IGBT, in the case where a stripe-shapedp-type contact layer is formed in parallel to the trench, it is observedfrom an experiment that, if a length of a non-formation region is equalto or larger than 5 μm, the latch-up destruction occurs in the IGBT.Therefore, measures to cope with the aforementioned pattern defects arevery urgent.

In view of the foregoing problems, the present invention is to provide asemiconductor device where switching destruction caused by processdefects in an insulated gate semiconductor device such as an IGBT or aMOSFET is reduced and a method of manufacturing the same.

Means for Solving Problem

An aspect of the present invention for accomplishing the above-mentionedpurpose by solving the problem is to provide a semiconductor deviceincluding: a drift layer which is constructed from a first conductivitytype semiconductor substrate; a second conductivity type base layerwhich is selectively formed on a surface of a first principal plane ofthe semiconductor substrate; a first conductivity type source layerwhich is selectively formed on a surface of the base layer; a secondconductivity type contact layer which is formed to be in contact withthe source layer on the first principal plane side of the base layer andwhich has a concentration higher than that of the base layer; a gateelectrode which is formed so as to face the drift layer, the base layer,and the source layer through an insulating film; an emitter electrodewhich is formed on the first principal plane so as to be electricallyconnected to the source layer; and an interlayer insulating film whichis formed on the first principal plane of the semiconductor substrate tobe interposed between the gate electrode and the emitter electrode so asto insulate the gate electrode and the emitter electrode, in which thesemiconductor device further includes a second conductivity type counterlayer which is formed to be in contact with the source layer and tooverlap the contact layer and which is formed to be shallower than thebase layer and to have a high concentration, and in which a total dopingamount per unit area of the counter layer is larger than 10% of a totaldoping amount per unit area of the contact layer.

In addition, in the above aspect of the semiconductor device accordingto the present invention, the total doping amount per unit area of thecounter layer may be larger than that of the contact layer.

In addition, in the above aspect of the semiconductor device accordingto the present invention, a sum of the total doping amount per unit areaof the counter layer and the total doping amount per unit area of thecontact layer may be larger than that of the source layer.

In addition, in the above aspect of the semiconductor device accordingto the present invention, the total doping amount per unit area of thecounter layer may be larger than that of the source layer.

In addition, in the above aspect of the semiconductor device accordingto the present invention, the counter layer may be formed so as to beself-aligned with a position of an opening portion of the interlayerinsulating film.

In addition, in the above aspect of the semiconductor device accordingto the present invention, a plurality of the counter layers may beinstalled.

In addition, in the above aspect of the semiconductor device accordingto the present invention, the semiconductor device may be an IGBT.

In addition, in the above aspect of the semiconductor device accordingto the present invention, the semiconductor device may be a trenchgate-type IGBT.

In addition, in the above aspect of the semiconductor device accordingto the present invention, a shape of a cross section of pn junctionbetween the counter layer and the source layer may have a portion whichis convex to the inside of the source layer.

According to another aspect of the present invention, there is provideda method of manufacturing a semiconductor device including: a firstprocess of implanting second conductivity type impurity ions in a firstprincipal plane of a semiconductor substrate with such a range that thecontact layer is shallower than a base layer included in thesemiconductor device in order to form the contact layer included in thesemiconductor device; a second process of implanting first conductivitytype impurity ions in the first principal plane with such a range thatthe source layer is shallower than the contact layer in order to formthe source layer included in the semiconductor device, after the firstprocess; and a third process of implanting second conductivity typeimpurity ions in the first principal plane with such a range that acounter layer is deeper than the source layer and shallower than thebase layer at a dose which is equal to or larger than 10% of a dose ofthe ion implantation of the first process in order to form the counterlayer included in the semiconductor device, after the second process.

In addition, in the above aspect of the method of manufacturing thesemiconductor device according to the present invention, the dose of ionimplantation of the third process may be larger than that of the firstprocess.

In addition, in the above aspect of the method of manufacturing thesemiconductor device according to the present invention, a sum of thedose of ion implantation of the first process and the dose of ionimplantation of the third process may be larger than that of the secondprocess.

In addition, in the above aspect of the method of manufacturing thesemiconductor device according to the present invention, the dose of ionimplantation of the third process may be larger than that of the secondprocess.

In addition, in the above aspect of the method of manufacturing thesemiconductor device according to the present invention, the ionimplantation of the third process may be performed by using theinterlayer insulating film, where an opening portion is selectivelyformed, as a mask.

Effect of the Invention

In this manner, according to the present invention, with respect to aninsulated gate semiconductor device such as an IGBT or a MOSFET, it ispossible to provide a semiconductor device where switching destructioncaused by process defects is reduced and a method of manufacturing thesame.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a cross-sectional view illustrating main components of asemiconductor device according to an embodiment of the presentinvention.

FIG. 2 is a cross-sectional view illustrating a method of manufacturinga semiconductor device according to an embodiment of the presentinvention.

FIG. 3 is a cross-sectional view illustrating a method of manufacturinga semiconductor device according to an embodiment of the presentinvention.

FIG. 4 is a cross-sectional view illustrating a method of manufacturinga semiconductor device according to an embodiment of the presentinvention.

FIG. 5 is a cross-sectional view illustrating a method of manufacturinga semiconductor device according to an embodiment of the presentinvention.

FIG. 6 is a cross-sectional view illustrating a method of manufacturinga semiconductor device and an operational principle thereof according toan embodiment of the present invention.

FIG. 7 is a concentration distribution diagram illustrating a net dopingconcentration of a semiconductor device according to an embodiment ofthe present invention.

FIG. 8 is a concentration distribution diagram illustrating a net dopingconcentration of a semiconductor device according to an embodiment ofthe present invention.

FIG. 9 is a cross-sectional view illustrating main components of asemiconductor device according to an embodiment of the present inventionand a concentration distribution diagram illustrating a net dopingconcentration of the semiconductor device.

FIG. 10 is a cross-sectional view illustrating main components of asemiconductor device according to an embodiment of the present inventionand a concentration distribution diagram illustrating a net dopingconcentration of the semiconductor device.

FIG. 11 is a plan view illustrating a method of manufacturing asemiconductor device according to an embodiment of the presentinvention.

FIG. 12 is a cross-sectional view illustrating main components of asemiconductor device according to an embodiment of the present inventionand a concentration distribution diagram illustrating a net dopingconcentration of the semiconductor device.

FIG. 13 is a cross-sectional view illustrating main components of asemiconductor device according to an embodiment of the presentinvention.

FIG. 14 is a cross-sectional view illustrating a method of manufacturinga semiconductor device according to an embodiment of the presentinvention.

FIG. 15 is a cross-sectional view illustrating main components of asemiconductor device according to an embodiment of the present inventionand a concentration distribution diagram illustrating a net dopingconcentration of the semiconductor device.

FIG. 16 is a cross-sectional view illustrating main components of asemiconductor device according to an embodiment of the presentinvention.

FIG. 17 is a cross-sectional view illustrating a method of manufacturinga semiconductor device according to an embodiment of the presentinvention.

FIG. 18 is a cross-sectional view illustrating main components of asemiconductor device according to an embodiment of the presentinvention.

FIG. 19 is a plan view illustrating a method of manufacturing asemiconductor device according to an embodiment of the presentinvention.

FIG. 20 is a cross-sectional view illustrating main components of asemiconductor device according to an embodiment of the presentinvention.

FIG. 21 is a cross-sectional view illustrating a method of manufacturinga semiconductor device according to an embodiment of the presentinvention.

FIG. 22 is a cross-sectional view illustrating a method of manufacturinga semiconductor device according to an embodiment of the presentinvention.

FIG. 23 is a cross-sectional view illustrating main components of asemiconductor device according to an embodiment of the presentinvention.

FIG. 24 is a cross-sectional view for describing a semiconductor deviceaccording to an embodiment of the present invention and operations ofthe semiconductor device.

FIG. 25 is a cross-sectional view illustrating main components of asemiconductor device in the related art.

FIG. 26 is a cross-sectional view for describing operations of asemiconductor device in the related art.

FIG. 27 is a cross-sectional view illustrating main components of asemiconductor device in the related art.

FIG. 28 is a cross-sectional view illustrating a method of manufacturinga semiconductor device in the related art.

FIG. 29 is a cross-sectional view illustrating a method of manufacturinga semiconductor device in the related art.

FIG. 30 is a cross-sectional view illustrating a method of manufacturinga semiconductor device in the related art.

FIG. 31 is a cross-sectional view for describing operations of asemiconductor device in the related art.

BEST MODE(S) FOR CARRYING OUT THE INVENTION

Hereinafter, semiconductor devices and methods of manufacturing the sameaccording to embodiments of the present invention will be described indetail with reference to the drawings. In the description of theembodiments hereinafter, a first conductivity type denotes an n type,and a second conductivity type denotes a p type. In the presentinvention, the first conductivity type is not limited to the n type, andthe second conductivity type is not limited to the p type. In the casewhere the n type and the p type can be switched so that the first andthe second conductivity types are p type and n type, respectively,portions having the same operations may exist.

In addition, in the specification, as terms for a semiconductor device,a device, an element, a chip, and a semiconductor chip are used.However, all the terms indicate the same object, that is, thesemiconductor device. In addition, in the specification, a surface of asilicon substrate may be expressed by an upper surface, and a rearsurface thereof may be expressed by a lower surface. In addition, in thespecification, in a semiconductor chip, a region where an emitterelectrode is formed and a current can flow is referred to as an “activeregion”.

In addition, in the specification, as a region from an end of the activeregion to an outer-circumference-side end of the chip, a structuralportion for alleviating the electric field intensity on the surface ofthe chip generated due to application of a voltage to the element isreferred to as a “terminated structure region”. In addition, in thespecification, in the description of concentration and the like, forexample, the expression of 1.0E12/cm² denotes 1.0×10¹²/cm². In addition,a symbol + (−) described at the right of each region (p-type region andn-type region) illustrated in each figure denotes that an impurityconcentration thereof is relatively higher (lower) than other regions.In addition, in the specification, with respect to a distribution ofimpurity doping concentration per unit area of donors or acceptors, anintegrated concentration in a depth direction of a semiconductorsubstrate is referred to as a total doping amount per unit area or,simply, a total amount.

First Embodiment

In a first embodiment, a MOS gate semiconductor device where a p-typecounter layer is newly formed in order to prevent latch-up bysuppressing pattern defect of a p-type contact layer formed on a surfaceof a p-type base layer and a method of manufacturing the same will bedescribed.

FIG. 1 is a cross-sectional view illustrating main components of asemiconductor device according to an embodiment of the presentinvention. FIG. 1 illustrates a cross-sectional view of an IGBT which isa semiconductor device according to the first embodiment. In FIG. 1, ap-type base layer 4 having a concentration higher than that of an n-typedrift layer 1 is selectively formed on a surface of the semiconductorsubstrate including the n-type drift layer 1. An n-type source layer 5having a concentration higher than that of the p-type base layer 4 isselectively formed on a surface of the p-type base layer 4. Moreover, ap-type contact layer 6 is formed in the p-type base layer 4 so as to bein contact with the selectively-formed n-type source layer 5.

In addition, a polysilicon electrode 11 for a gate electrode isselectively formed on the surface of the semiconductor substrate so asto face the surface of each layer of the n-type source layer 5, thep-type base layer 4, and the n-type drift layer 1 through a gate oxidefilm 10. The polysilicon electrodes 11 are condensed on the chip to bein contact with pads for gate electrodes (not illustrated) (portions ofpackage connected to gate ports).

A p-type counter layer 7 having a concentration higher than that of thep-type base layer 4 is formed on the surface of the semiconductorsubstrate including the n-type drift layer 1. The p-type counter layer 7is formed to be in contact with the n-type source layer 5, to overlapthe p-type contact layer 6, not to exceed the end of the n-type sourcelayer 5 on the side facing the polysilicon electrode 11, that is, to beseparated from an interface where the p-type base layer 4 and the gateoxide film 10 are in contact with each other, and to be shallower thanthe p-type base layer 4. The p-type base layer 4 is connected to anemitter electrode 12. In this manner, a MOS gate structure is formed.

An interlayer insulating film 9 is formed to cover the polysiliconelectrode 11. The interlayer insulating film 9 is opened so that then-type source layer 5 and the p-type counter layer 7 on the uppersurface of the p-type base layer 4 are exposed. The aforementionedemitter electrode 12 made of aluminum or the like is formed on a surfaceof the chip. The emitter electrode 12 is electrically connected throughthe above-described opening portions of the interlayer insulating film 9to the n-type source layer 5 and the p-type counter layer 7. The emitterelectrode 12 and the polysilicon electrode 11 which becomes the gate areinsulated by the interlayer insulating film 9.

On the other hand, on a lower surface of the semiconductor substrate, ann-type field stop layer 2 is formed to be in contact with the n-typedrift layer 1, and a p-type collector layer 3 is formed to be in contactwith the n-type field stop layer 2 to be connected to a collectorelectrode 13 formed on the outer layer of the lower surface of thesemiconductor substrate. FIG. 1 illustrates a finished structure in thecase where aforementioned three types of pattern defect do not occur.The cases where the three types of pattern defect occur will bedescribed later.

In the p-type counter layer 7, there are three relations with respect tothe p-type contact layer 6, the n-type source layer 5, and the p-typebase layer 4. In the first relation, the p-type counter layer 7 isnecessarily formed to be in contact with the n-type source layer 5 andto be deeper than the n-type source layer 5. In this formation, a holecurrent flows through the p-type counter layer 7 to the emitterelectrode 12, so that voltage drop of a portion just below the n-typesource layer 5 can be decreased.

In the second relation, the p-type counter layer 7 is formed to overlapthe p-type contact layer 6. The purpose of formation of the p-typecounter layer 7 is that, even in the case where formation defect(omission) occurs in the p-type contact layer 6, the same effect ofpreventing the latch-up as that of the layer is allowed to be sustained.Therefore, by allowing the formation region of the p-type counter layer7 (planar distribution of the surface of the chip and concentrationdistribution in the depth direction) to be the same as the p-typecontact layer 6 or at least to overlap thereof, the resistance of theportion just below the n-type source layer 5 needs to be lowered.

In the third relation, the p-type counter layer 7 is necessarily formedto be separated from the interface where the p-type base layer 4 and thegate oxide film 10 are in contact with each other and to be shallowerthan the p-type base layer 4. The gate threshold value is determined bya concentration of the p-type base layer 4. Therefore, if the p-typecounter layer 7 having a concentration higher than that of the p-typebase layer 4 is formed in a portion of a channel (inversion layer) ofelectrons generated on the surface of the p-type base layer 4 when theMOS gate is turned on, the threshold value is changed.

Therefore, in order to satisfy the first and the second relations(conditions) and not to influence the channel region of the p-type baselayer 4, the p-type counter layer 7 is formed to be separated from theinterface where the p-type base layer 4 and the gate oxide film 10 arein contact with each other. In addition, if the p-type counter layer 7is formed to be deeper than the p-type base layer 4, a depletion layeris widened from the p-type counter layer 7. In this case, the electricfield intensity is greatly increased in an inner portion of the p-typecounter layer 7 having a concentration higher than that of the p-typebase layer 4, so that a resistant voltage is decreased. In order toprevent the decrease in resistant voltage, the p-type counter layer 7may be formed to be shallower than the p-type base layer 4.

Next, a method of manufacturing the IGBT according to the firstembodiment will be described. FIG. 2 is a cross-sectional viewillustrating a method of manufacturing the semiconductor deviceaccording to the embodiment of the present invention. FIG. 2 illustratesonly the flow of the processes relating to the formation of the p-typecounter layer 7 in the processes of manufacturing the IGBT according tothe first embodiment. First, standard processes of manufacturing theIGBT or MOSFET are performed just before FIG. 2( a).

As an example, an initial oxide film having a thickness of 8000 Å by thethermal oxidation is formed on a surface of an FZ (float-zone) typesemiconductor substrate having an n conductivity type and about 60 Ωcm.Subsequently, the initial oxide film is patterned by a photolithographymethod; boron ion implantation is performed; and thermal diffusion isperformed, so that a terminated structure region for alleviating theelectric field of the depletion layer which is widened during theturned-off period, for example, a well-known guard ring structure andthe like is formed (not illustrated). Subsequently, the initial oxidefilm is removed from the active region by a photolithography method; thegate oxide film 10 is formed by thermal oxidation; a polysilicon film isformed by a deposition method; and then the polysilicon film ispatterned by a photolithography method, so that the polysiliconelectrode 11 is formed.

Next, boron ion implantation is performed, and thermal treatment isperformed, so that the p-type base layer 4 is formed. With respect tothe p-type base layer 4, for example, the dose of the boron ionimplantation 18 is set to 2E14/cm², and the acceleration energy is setto 150 keV. In addition, a temperature and a temperature sustaining timeof thermal treatment are set to 1150° C. and 60 minutes. The portionillustrated in the cross section of FIG. 2( a) is formed by theprocesses hereinbefore.

Next, as illustrated in FIG. 2( a), resist 8 is patterned by aphotolithography method, and baking (a process of stabilizing the resistby thermal treatment at a temperature of about 150° C.) is performed, sothat a mask of the resist 8 where a portion of the upper surface of thep-type base layer 4 is opened is formed. Subsequently, the boron ionimplantation 18 is performed by using the patterned resist 8 as a mask.At this time, the dose is set to, for example, 1E15/cm², and theacceleration energy is set to, for example, 60 keV. As a result, a range(Rp) of the boron ion is about 0.20 μm.

In this manner, boron is introduced into the region which is to be thep-type contact layer 6. In addition, in this figure, although an oxidefilm is not formed on the surface of the p-type base layer 4, an oxidefilm which is so thin that it does not influence the range of the ionimplantation may be formed as described hereinafter. For example, thegate oxide film described above may be allowed to remain. Alternatively,before the resist 8 is applied, the gate oxide film may be removed byusing the polysilicon electrode 11 as a mask, and a screening filmhaving a thickness of about 300 Å may be formed by separate thermaloxidation.

Subsequently, as illustrated in FIG. 2( b), the resist 8 is applied, andthe patterning and baking of the resist 8 are performed in a portion ofthe opening of the surface of the p-type base layer 4 so that the resist8 is not in contact with the polysilicon electrode 11. Next, arsenic ionimplantation 19 (phosphorus is available) where the arsenic ions are tobe donors is performed by using the resist 8 as a mask, and thermaltreatment is performed. The dose of the arsenic ion implantation 19 isset to, for example, 4E15/cm², and acceleration energy is set to, forexample, 120 keV. At this time, the range of the arsenic ions is about0.08 μm. In the case of the same acceleration energy, the range ofarsenic is shallower than that of boron. In this step, the n-type sourcelayer 5 is formed. The thermal treatment of this case may not beprovided.

Moreover, as illustrated in FIG. 2( c), the resist 8 is applied, andpatterning and baking are performed so that a portion of the surface ofthe p-type base layer 4 is opened. Next, the boron ion implantation 18is performed by using the resist 8 as a mask, and after the resist 8 isremoved, thermal treatment is performed. The dose of the boron ionimplantation is set to, for example, 5E15/cm², and the accelerationenergy is set to, for example, 50 keV. At this time, the range of theboron ions is 0.17 μm. In addition, a temperature and a temperaturesustaining time of the thermal treatment are, for example, 950° C. and30 minutes, respectively. In this manner, as illustrated in FIG. 2( d),the p-type counter layer 7 is formed.

Herein, there are three conditions of the manufacturing methodcorresponding to the three relations (conditions) in the formation ofthe p-type counter layer 7. As the first condition, in the patterning ofthe resist 8 of FIG. 2( c), at least a portion of the opening portionwhere the boron ion implantation is to be performed is configured tooverlap the region where the n-type source layer 5 is formed, that is,the opening portion of the resist of the time when the arsenic ionimplantation is performed. In addition, patterning is performed so thatthe end portion of the opening portion of the resist 8 for the p-typecounter layer 7 does not exceed the position where the end portionthereof is separated from the interface where the p-type base layer 4and the gate oxide film 10 are in contact with each other or theposition where the n-type source layer 5 and the p-type base layer 4 arein contact with each other (so that the end portion is located insidethereof). In this condition, layout of photomask and reticle may beadjusted.

As the second condition, in the formation of the p-type counter layer 7,the range of the boron ions is configured to be deeper than the n-typesource layer 5. In addition, a portion of the p-type counter layer 7 isconfigured to overlap a portion of the p-type contact layer 6, and therange is configured to be shallower than the p-type base layer 4. Inother words, if the range of the boron ion implantation in the formationof the p-type counter layer 7 is denoted by Rp7 and the range of thearsenic ion implantation in the formation of the n-type source layer 5is denoted by Rp5, the acceleration energy of each ion implantation maybe adjusted so that Rp7>Rp5.

In addition, it is preferable that the acceleration energy of the boronion implantation for the p-type counter layer 7 be equal to or lowerthan the acceleration energy of the ion implantation for the p-typecontact layer 6. For example, in the first embodiment, as describedabove, the acceleration energy of the boron ion implantation 18 for thep-type contact layer 6 is set to 60 keV (the range is set to 0.20 μm);the acceleration energy of the arsenic ion implantation 19 for then-type source layer 5 is 120 keV (the range is set to 0.08 μm); and theacceleration energy of the boron ion implantation 18 for the p-typecounter layer 7 is set to 50 keV (the range is set to 0.17 μm).

Next, how the semiconductor device and the method of manufacturing thesame according to the present invention prevent the aforementioned threepattern defects under the specific formation conditions will bedescribed as the first embodiment of the present invention.

(Effect of Pattern Defect (1))

First, the aforementioned pattern defect (1), that is, the case wherethe p-type contact layer 6 is formed or the unnecessary n-type sourcelayer 5 is formed at a site where the p-type contact layer 6 has beenformed is described with reference to FIG. 3. FIG. 3 is across-sectional view illustrating a method of manufacturing asemiconductor device according to an embodiment of the presentinvention. FIGS. 3( a) to 3(d) are cross-sectional views illustrating asequence of processes in the case where the pattern defect (2) occurs inthe manufacturing method according to the first embodiment. Herein, FIG.3( a) to FIG. 3( d) of the sequence (flow) of the processes are the sameas those of FIG. 2, and thus, the description is concentrated on thedifferent points.

As illustrated in FIG. 3( a), after the p-type base layer 4 is formed,in order to form the p-type contact layer 6, the resist 8 is patterned,and the boron ion implantation 18 is performed by using the resist 8 asa mask. Subsequently, as illustrated in FIG. 3( b), the arsenic ionimplantation 19 is performed by using the resist 8 as a mask. At thistime, it is assumed that, the resist 8 is exposed, so that the resist 8which is to remain is not left on the p-type base layer 4 on the leftside of the figure.

As an example of the reason of the excessive exposure, there is a casewhere an omission portion exists in a light blocking layer made ofchromium or the like on a mask. Otherwise, there is also a case whereextrinsic materials (particles, waste, or the like) are located on anupper portion of the resist 8 of the p-type base layer 4 during theapplication of the resist, so that the resist 8 does not remain on thesemiconductor substrate. Therefore, arsenic ions are introduced over theentire opening portion of the polysilicon electrode 11 in the left-sidep-type base layer 4. Since the arsenic is larger than the boron in massand is shorter (shallower) in the range, after the thermal treatment,the n-type source layer 5 is formed on the entire outer surface thereof(refer to FIG. 3( c)).

Subsequently, as illustrated in FIG. 3( c), the resist 8 is patterned,and the boron ion implantation 18 is performed in a predetermined regionof the aforementioned p-type base layer 4. The n-type source layer 5formed on the entire opening portion of the polysilicon electrode 11 ofthe left-side p-type base layer 4 is cancelled by the implanted boron,and as illustrated in FIG. 3( d), similarly to the right-side p-typebase layer 4, the p-type counter layer 7 is formed. In this manner, thep-type counter layer is newly introduced, so that even in the case wherethe p-type contact layer 6 is formed or unnecessary donors (arsenic orthe like) are induced at a site where the p-type contact layer 6 hasbeen formed, the n-type source layer 5 can be cancelled by the p-typecounter layer 7.

How the resistance of the path of the hole current is lowered byallowing the unnecessary n-type source layer to be cancelled by thep-type counter layer will be described with reference to FIG. 6. FIG. 6is a cross-sectional view illustrating a method of manufacturing asemiconductor device according to an embodiment of the present inventionand an operational principle thereof. FIG. 6 illustrates the hole flowsand the resistance components of the p-type base layer in the tuned-onand turned-off states of the IGBT according to the first embodiment ofthe present invention.

FIG. 6( a) illustrates the case where the p-type counter layer isintroduced into the pattern defect (1). As described above in FIG. 31(a), in the case of the related art where the p-type counter layer 7 isnot introduced, the unnecessarily-formed n-type source layer 5 remainsslightly in the opening portion of the polysilicon electrode 11 of thesurface of the p-type base layer 4. However, in FIG. 6( a), asillustrated in FIGS. 2( c) and 2(d), the p-type counter layer 7 is alsoformed in the left-side p-type base layer 4. Therefore, thenecessarily-introduced n-type source layer 5 is cancelled to be removed,so that the p-type high concentration layer can be further formed.

Accordingly, since the hole flow 17 passes through the p-type counterlayer 7, the resistance component 16 when flowing from the portion justbelow the n-type source layer 5 to the emitter electrode 12 is lowered.Therefore, the voltage drop of the portion just below the n-type sourcelayer 5 involved in the hole flow 17 is decreased, so that it ispossible to prevent the occurrence of the latch-up. The p-type baselayer 4 on the left side of FIG. 6( a) may be configured in the samestructure as that of the normal p-type base layer 4 (on the right sideof FIG. 6( a)) where the unnecessary n-type source layer 5 is notintroduced.

Herein, the condition that when the p-type counter layer 7 isintroduced, the unnecessary n-type source layer 5 is cancelled by thep-type counter layer 7 in the p-type base layer 4 on the left sides ofFIGS. 3( c) and 3(d) is as follows. Namely, a sum of the total dopingamount per unit area of the p-type contact layer 6 and the total dopingamount per unit area of the p-type counter layer 7 may be larger thanthe total doping amount per unit area of the n-type source layer 5. Morepreferably, the sum may be twice or larger.

(Effect of Pattern Defect (2))

Next, the aforementioned pattern defect (2), that is, the case where thep-type contact layer 6 is omitted at the site where the n-type sourcelayer is not to be originally introduced will be described withreference to FIG. 4. FIG. 4 is a cross-sectional view illustrating amethod of manufacturing a semiconductor device according to anembodiment of the present invention. FIG. 4( a) to FIG. 4( d) illustratea sequence of processes in the case where the pattern defect (2) occursin the manufacturing method according to the first embodiment.

As illustrated in FIG. 4( a), after the p-type base layer 4 is formed,in order to form the p-type contact layer 6, the resist 8 is applied,and patterning is performed. At this time, it is assumed that the resist8 is not exposed to and removed from the p-type base layer 4 on the leftside of the figure. As an example of the reason of non-exposure, thereis a case where omission exists in a light blocking layer made ofchromium or the like on a mask or extrinsic materials (particles, waste,or the like) are located on an upper portion of the resist 8 of thep-type base layer 4 during the exposure, so that light is blocked.

In this state, the boron ion implantation 18 is performed by using theresist 8, which is obtained after the baking, as a mask. Therefore, asillustrated in FIG. 4( b), boron is introduced only into the p-type baselayer 4 on the right side of FIG. 4( b), so that the p-type contactlayer 6 is formed; and the p-type contact layer 6 is not formed in thep-type base layer 4 on the left side of FIG. 4( b).

Subsequently, the arsenic ion implantation 19 is performed by using theresist 8 as a mask. In this step, a p-type layer having a concentrationhigher than that of the left-side p-type base layer is not formed in theleft-side p-type base layer. Herein, as illustrated in FIG. 4( c), theresist 8 is applied and patterned; the boron ion implantation 18 isperformed by using the resist 8 as a mask; and after the resist isremoved, thermal treatment is performed, so that the p-type counterlayer 7 is formed in each of the left-side and right-side p-type baselayers 4 as illustrated in FIG. 4( d). In other words, in the step ofFIG. 4( a), although the boron of the p-type contact layer 6 is notintroduced into the left-side p-type base layer 4, since the boron isintroduced in this process, the p-type counter layer 7 may be formed tohave a concentration higher than that of the p-type base layer 4 in theleft-side p-type base layer 4 of FIG. 4.

How the latch-up can be prevented by newly introducing the p-typecounter layer 7 into a site where the p-type contact layer 6 is notformed at the site where the p-type contact layer 6 is to be originallyformed will be described with reference to FIG. 6 described above. Thecase where the p-type counter layer 7 is introduced into the patterndefect (2) corresponds to FIG. 6( b).

As described in FIG. 31( b), in the semiconductor device of the relatedart, in the case where the p-type contact layer 6 is omitted, since theacceptors in the path of the hole flow 17 are generated at theconcentration corresponding to only the p-type base layer 4, theresistance component 16 is greatly increased. On the other hand, in thecase of the first embodiment of the present invention, as illustrated inFIGS. 4( c) and 4(d), the boron is introduced through the ionimplantation at the site where the p-type contact layer 6 is omitted(the surface of the left-side p-type base layer 4), so that the p-typecounter layer 7 is formed. Therefore, as illustrated in FIG. 6( b), theresistance component 16 of the path of the hole flow 17 is decreased, sothat the latch-up can be prevented.

Herein, the condition necessary for allowing the concentration of thep-type counter layer 7 to be equal to or higher than that of the p-typecontact layer 6, and achieving the effect of latch-up prevention whenintroducing the p-type counter layer 7 will be described.

First, the sheet resistance per unit area of the p-type contact layer 6needs to be sufficiently low when the hole current flows. During theturned-on or turned-off, the hole current of, for example, about 1000A/cm² flows just below the n-type source layer 5. At this time, forexample, the length (the length in the horizontal direction of thepaper) of the n-type source layer 5 is set to 1 μm; the width thereof(the length in the vertical direction of the paper) is set to 300 μm;and the area of the region where the MOS gate operates is set to 0.01cm².

If the voltage drop due to the hole current two-dimensionally conductingthe portion just below the n-type source layer 5 needs to be 0.7 V orless, the sheet resistance of the conductive region needs to be lowerthan at least 0.7 (V)/(0.5E-4 (cm)/300E-4 (cm))×1000 (A/cm²)×0.01(cm²)=42 (Ω/□). If the sheet resistance is changed to the acceptorconcentration per unit area, the sheet resistance needs to be4.596E15/42≅1.1E14/cm² or more. In other words, the concentration perunit area (total amount) of the p-type counter layer needs be at leastthe value (1.1E14/cm²) or more.

In general, since the total amount per unit area of the p-type contactlayer 6 is set to have margin so as to be larger than the calculatedvalue, the total amount per unit area is set to for example, 1.0E15/cm²or more corresponding to 10 times the value. Since the introduction ofthe p-type counter layer 7 is also measures to cope with the omission ofthe p-type contact layer 6 (pattern defect (2)), the total amount needsto be at least 10% ( 1/10) of the total amount of the p-type contactlayer 6, that is, to be larger than 1.1E14/cm² described above. Morepreferably, the total amount of the p-type counter layer 7 is 1.0E15/cm²or more, that is, it is larger than the total amount of the p-typecontact layer 6.

Schematic diagrams of the net doping concentration in the conditionsdescribed hereinbefore are illustrated in FIG. 7. FIG. 7 is aconcentration distribution diagram illustrating a net dopingconcentration of a semiconductor device according to an embodiment ofthe present invention. FIG. 7 illustrates the net doping concentrationdistribution on the cross section taken along cutting line A1-A2illustrated in FIG. 1. In FIG. 7, the net doping concentration on thevertical axis is scaled in logarithm.

For example, in the case where the total amount of the p-type counterlayer 7 is 0.1 (10%) of the total amount of the p-type contact layer 6,as illustrated in FIG. 7( a), the p-type counter layer 7 is shallowerthan the p-type contact layer, and the maximum concentration thereof islowered. Therefore, in the depth direction, the entire portion of thep-type counter layer 7 is included in the p-type contact layer 6.

It is preferable that the concentration of the p-type counter layer 7 beequal to or larger than at least the concentration in the concentrationdistribution. More preferably, the total amount of the p-type counterlayer 7 may be equal to or larger than the total amount of the p-typecontact layer 6. Although not shown, at this time, the concentrationdistribution of the p-type counter layer 7 is almost equal to that ofthe p-type contact layer 6, and the distribution is slightly shallowerin shape. More preferably, the total amount of the p-type counter layer7 may be equal to or larger than twice the total amount of the p-typecontact layer 6.

Accordingly, for example, as illustrated in FIG. 7( b), the net dopingconcentration distribution of the p-type counter layer 7 is shallowerand higher than the concentration distribution of the p-type contactlayer 6. In addition, in the case where the total amount of the p-typecounter layer 7 is larger than the total amount of the p-type contactlayer 6, the depth may also be slightly increased. In summary, if thesite where the p-type contact layer 6 is omitted is compensated or theconcentration of the unnecessary n-type source layer 5 is cancelled, theobject of the present invention can be achieved.

In addition, the manufacturing method for actually implementing thetotal amount of the p-type counter layer 7 involved in the relation tothe p-type contact layer 6 may be configured as follows. At thefinishing time of the manufacturing, the total amount of each p-typelayer is almost equal to the dose of the boron ion implantation.Therefore, the dose of the boron ion implantation 18 in the formation ofthe p-type counter layer 7 in FIG. 4( c) may be larger than 0.1 timesthe dose of the boron ion implantation 18 in the formation of the p-typecontact layer 6 in FIG. 4( a).

Preferably, the dose of the boron ion implantation (refer to the arrow18 in FIG. 4( c)) in the formation of the p-type counter layer 7 in FIG.4( c) may be larger than the dose of the boron ion implantation (referto the arrow 18 in FIG. 4( a)) in the formation of the p-type contactlayer 6. More preferably, the dose of the boron ion implantation (referto the arrow 18 in FIG. 4( c)) in the formation of the p-type counterlayer 7 in FIG. 4( c) may be larger than twice the dose of the boron ionimplantation (refer to the arrow 18 in FIG. 4( a)) in the formation ofthe p-type contact layer 6.

In this manner, although the site where the p-type contact layer 6 isomitted is formed as described above, the acceptors can be secured witha sufficient concentration at the site, and thus, the resistance of theportion just below the n-type source layer 5 is decreased, so that it ispossible to obtain the effect of preventing the latch-up.

(Effect of Pattern Defect (3)) Next, the aforementioned pattern defect(3), that is, the case where the pattern defects (1) and (2)simultaneously occur locally will be described with reference to FIG. 5.FIG. 5 is a cross-sectional view illustrating a method of manufacturinga semiconductor device according to an embodiment of the presentinvention. Although the occurrence frequency of the pattern defect (3)is much lower than those of the pattern defects (1) and (2), the patterndefect (3) may occur sufficiently frequently. FIGS. 5( a) to 5(d) arecross-sectional views illustrating a sequence of processes in the casewhere the pattern defect (3) occurs in the manufacturing methodaccording to the first embodiment.

As illustrated in FIG. 5( a), after the p-type base layer 4 is formed,in order to form the p-type contact layer 6, the resist 8 is applied,and patterning is performed. At this time, it is assumed that the resist8 on the p-type base layer 4 on the left side of FIG. 5( a) is notexposed, and the resist 8 is not removed. The reason of non-exposure isthe same as described above.

Subsequently, as illustrated in FIG. 5( b), the arsenic ion implantation19 is performed by using the resist 8 as a mask. At this time, it isassumed that, to the p-type base layer 4 on the left side of FIG. 5( b),the resist 8 is exposed, and the resist 8 which is to remain does notremain. The reason of the excessive exposure is the same as describedabove. Therefore, arsenic ions are introduced into the entire openingportion of the polysilicon electrode 11 in the left-side p-type baselayer 4. After the thermal treatment, as illustrated in FIG. 5( c), then-type source layer is formed on the entire outer surface thereof. Inaddition, in this step, a p-type layer having a concentration higherthan that of the left-side p-type base layer 4 is not formed in theleft-side p-type base layer 4 of FIG. 5( c).

Herein, as described above, the resist 8 is applied and patterned; theboron ion implantation (refer to the arrow 18 in FIG. 5( c)) isperformed by using the resist 8 as a mask; and thermal treatment isperformed, so that the p-type counter layer 7 is formed in each of theleft-side and right-side p-type base layers 4. In other words, in thestep of FIG. 5( a), although the boron of the p-type contact layer 6 isnot introduced into the left-side p-type base layer 4, the boron isintroduced in this process, so that the p-type counter layer 7 having aconcentration higher than that of the p-type base layer 4 is formed.

In this manner, the pattern defect (3) can be prevented by newlyintroducing the p-type counter layer 7. In addition, how the resistancecomponent 16 in the path of the hole flow 17 is decreased by the p-typecounter layer 7 is the same as that of the case of the aforementionedpattern defect (2), and thus, the description thereof is not repeated.In this manner, as a result of the formation of the p-type counter layer7, it is possible to prevent the occurrence of latch-up in the patterndefect (3).

In addition, as a preferred condition in the first embodiment of thepresent invention, the total amount of the p-type counter layer 7 may belarger than the total amount of the n-type source layer 5. In the caseof the aforementioned pattern defect (3), in order to compensate for theconcentration of the n-type source layer 5 to be cancelled by the p-typecounter layer, the concentration of the p-type counter layer ismaintained to be higher than that of the n-type source layer 5 in theoutermost layer of the p-type base layer 4. In addition, the n-typesource layer 5 needs to be cancelled in the depth direction as well asthe outermost layer in the same region.

Therefore, for this reason, the total amount of the p-type counter layer7 may be larger than the total amount of the n-type source layer 5. Inthis case, on the surface of the p-type base layer 4, the region wherethe p-type counter layer 7 is to be formed may be configured to benarrow so as to overlap not the entire portion but a portion of theregion where the n-type source layer 5 is to be formed. The reason isthat, if the p-type counter layer 7 of which the total amount is largerthan the total amount of the n-type source layer 5 is formed in theregion where the n-type source layer 5 is to be originally formed, then-type source layer 5 disappears.

In addition, another method for allowing the n-type source layer 5 notto disappear will be described with reference to FIG. 8. FIG. 8 is aconcentration distribution diagram illustrating a net dopingconcentration of a semiconductor device according to an embodiment ofthe present invention. FIG. 8 illustrates a schematic diagram of the netdoping concentration distribution on the cross section taken alongcutting line B1-B2 illustrated in FIG. 1 in the IGBT as a semiconductordevice according to the first embodiment.

As illustrated in FIG. 8, preferably, at the position of the cuttingline B1-B2, that is, the region where the n-type source layer 5 is to beoriginally formed, the surface of the n-type source layer 5 may not becancelled by the p-type counter layer 7. For example, preferably, thep-type counter layer 7 in the region is not an ion implantation regionbut a transverse diffusion portion slightly protruding from theimplantation region.

Alternatively, with respect to the range Rp of the boron ionimplantation 18 for the formation of the p-type counter layer 7, thedepth obtained by subtracting a standard deviation ARp from the Rp maybe preferably configured to be larger than the range Rp of the arsenicin the n-type source layer 5. The range Rp of the p-type counter layer 7and the range of the n-type source layer 5 are configured using theabove relation, so that it is possible to suppress the cancellation ofthe net doping concentration of the n-type source layer 5 by the boronof the p-type counter layer 7.

In addition, in comparison with the structure illustrated in FIG. 25,the p-type counter layer according to the present invention is formed soas to be in contact with the n-type source layer 5 and so as for aportion thereof to overlap the p-type contact layer. Therefore, in thecase where the p-type contact layer 6 is omitted and the unnecessaryn-type source layer 5 is formed, such a preventing effect can beobtained.

In addition, in comparison with the structure illustrated in FIG. 27,the p-type counter layer 7 is formed to be shallower than the p-typebase layer 4, so that the region having sufficiently low sheetresistance can be formed in the portion just below the n-type sourcelayer 5 as described above. In addition, as described above, in theprocess of deeply diffusing the p-type high concentration layer, thedimension of the MOS gate is reduced, and thus, the diffusion layer suchas the p-type base layer becomes shallow, which comes to be against thepurpose of miniaturization. Therefore, boron needs to be implanted inthe region which is much narrower than the formation region of thep-type base layer 64, and thus, the effect of preventing the latch-upmay not be expected.

Second Embodiment

Next, a second embodiment of the present invention will be describedwith reference to FIG. 9. FIG. 9 is a cross-sectional view illustratingmain components of a semiconductor device according to an embodiment ofthe present invention and a concentration distribution diagramillustrating a net doping concentration of the semiconductor device.FIG. 9( a) illustrates a cross-sectional view of an IGBT as asemiconductor device according to the second embodiment of the presentinvention, and FIG. 9( b) illustrates net doping concentrationdistribution along cutting lines A1-A2 and B1-B2 illustrated in FIG. 9(a). In FIG. 9( b), the solid line indicates concentration distributionalong the cutting line A1-A2, and the broken line indicatesconcentration distribution along the cutting line B1-B2.

The feature of the second embodiment is that the p-type counter layer 7is formed so that the width thereof in the horizontal direction of thepaper is almost equal to that of the p-type contact layer 6 and thep-type counter layer 7 is shallower. In the first method ofmanufacturing the IGBT according to the second embodiment, the photomaskfor a resist pattern of the boron ion implantation in the formation ofthe p-type contact layer 6 is the same as the photomask in the p-typecounter layer 7.

In the second method of manufacturing the IGBT according to the secondembodiment, the acceleration voltage of the boron ion implantation inthe p-type counter layer 7 is configured to be low. Alternatively, theacceleration voltage may be configured to be equal, and during the boronion implantation of the p-type contact layer 6 and the boron ionimplantation of the p-type counter layer 7, thermal treatment (forexample, maintaining at 1000° C. for 30 minutes) may be inserted.

By forming the p-type counter layer 7 so as to be shallower than thep-type contact layer 6 intentionally, the effect of preventing thepattern defects (1), (2), and (3) can be obtained. Particularly, in thecase of the pattern defects (1) and (3), the effect of cancelling theunnecessary n-type source layer 5 formed on the outer surface of thep-type base layer can be improved. Therefore, the omission of the p-typecontact layer 6 or the formation of the unnecessary n-type source layer5 is prevented, so that it is possible to prevent the occurrence of thelatch-up.

Third Embodiment

Next, a third embodiment of the present invention will be described withreference to FIG. 10. FIG. 10 is a cross-sectional view illustratingmain components of a semiconductor device according to an embodiment ofthe present invention and a concentration distribution diagramillustrating a net doping concentration of the semiconductor device.FIG. 10( a) illustrates a cross-sectional view of an IGBT according tothe third embodiment of the present invention, and FIG. 10( b)illustrates net doping concentration distribution along cutting linesA1-A2 and B1-B2 illustrated in FIG. 10( a). In FIG. 10( b), the solidline indicates concentration distribution along the cutting line A1-A2,and in FIG. 10( b), the broken line indicates concentration distributionalong the cutting line B1-B2.

The third embodiment has two features. The first feature of the thirdembodiment is that the p-type counter layer 7 is formed so that thewidth thereof in the horizontal direction of the paper is narrower thanthat of the p-type contact layer 6 and the p-type counter layer 7 andthe p-type contact layer 6 are almost equal in depth. The second featureof the third embodiment is that, in the planar distribution of the uppersurface of the device, the p-type contact layer 6 and the p-type counterlayer 7 are different from each other in the shape of the pattern of theresist mask for ion implantation.

The method of manufacturing the IGBT according the third embodiment willbe described with reference to FIG. 11. FIG. 11 is a plan viewillustrating a method of manufacturing a semiconductor device accordingto an embodiment of the present invention. FIG. 11 illustrates a planview illustrating a flow of the processes of manufacturing the IGBTaccording to the third embodiment, in which a portion of the activeregion is illustrated to be enlarged. Since the processes performed in(a) to (d) of the flow diagram illustrated in FIG. 11 are almost thesame as those of (a) to (d) in FIG. 2 described above, the descriptionis concentrated on the different points of the surface.

First, in the state of FIG. 11( a), with respect to the polysiliconelectrode 11 for the gate and the p-type base layer 4, boron ionimplantation is performed by using a resist mask, and the p-type contactlayer 6 is formed as illustrated in FIG. 11( b). At this time, theopening portion of the resist mask is configured to be separated fromthe end of the polysilicon electrode 11 in the longitudinal direction.

Subsequently, arsenic ion implantation is performed by using a resistmask, so that the n-type source layer 5 is formed as illustrated in FIG.11( c). At this time, arsenic is introduced into the aforementionedseparated portion. Herein, the n-type source layers 5 are also formed inthe transverse direction of (the vertical direction of the paper) of thepolysilicon electrodes 11 so as to connect the n-type source layers 5which are in contact with the polysilicon electrodes 11 adjacent to eachother. In this manner, by allowing the n-type source layers 5 to bepatterned in a shape of a ladder, the region where the emitter electrodeand the n-type source layer 5 after the finishing are securely incontact with each other is increased, so that the effect of reducingcontact resistance can be obtained.

Subsequently, boron ion implantation is performed by using a resist masknewly, so that the p-type counter layer 7 is formed as illustrated inFIG. 11( d). At this time, in order that the n-type source layers 5 in ashape of a ladder does not disappear by the compensation of the p-typecounter layers 7, a resist mask for the p-type counter layers 7 is alsoformed in a shape of a ladder, so that boron may not be introduced intothe ladder portion of the n-type source layers 5. In addition, at thistime, the opening portion of the resist mask is configured to beslightly wider than the opening portion of the n-type source layer 5.

In this manner, on the surface, the shapes of the patterns of the resistmasks for ion implantation in the p-type contact layer 6 and the p-typecounter layer 7 are changed, so that the sites are provided where then-type source layer 5 does not disappear due to the p-type counter layer7. As a result, the n-type source layer 5 having a high concentrationcan be additionally formed, so that the contact resistance of the n-typesource layer 5 and the emitter electrode which is to be formed later canbe reduced.

Fourth Embodiment

Next, a fourth embodiment of the present invention will be describedwith reference to FIG. 12. FIG. 12 is a cross-sectional viewillustrating main components of a semiconductor device according to anembodiment of the present invention and a concentration distributiondiagram illustrating a net doping concentration of the semiconductordevice. FIG. 12( a) illustrates a cross-sectional view of an IGBTaccording to the fourth embodiment of the present invention, and FIG.12( b) illustrates net doping concentration distribution along cuttinglines A1-A2 and B1-B2 illustrated in FIG. 12( a). In FIG. 12( b), thesolid line indicates concentration distribution along the cutting lineA1-A2, and in FIG. 12( b), the broken line indicates concentrationdistribution along the cutting line B1-B2.

The feature of the fourth embodiment is that the depths of the p-typecontact layer 6 and the p-type counter layer 7 are also different withrespect to the third embodiment. In the fourth embodiment, the p-typecontact layer 6 is formed to be deep. By doing so, as describedhereinafter, a new function is added to the p-type contact layer 6, sothat the effect of preventing the latch-up is advantageously improved.

In the state where a power supply voltage is applied to the IGBT whenthe gate is turned off, the depletion layers are widened in the twolayers by the pn junction between the n-type drift layer 1 and thep-type base layer 4. The depletion layer of the p-type base layer 4needs not to reach the n-type source layer 5. The reason is that, if thedepletion layer reaches the n-type source layer 5, electrons flow fromthe n-type source layer 5 into the depletion layer, so that a currentflows irrespective of the gate. Although the concentration of the p-typebase layer 4 may be configured to be so high that the depletion layerdoes not reach the n-type source layer 5, since the concentrationdistribution of the p-type base layer 4 determines the gate thresholdvalue, the concentration thereof may not be excessively increased.

As a method in the related art, there is a method of forming a deepp-type contact layer 6 having a concentration higher than that of thep-type base layer 4 so as not to reach an inversion layer channel formedin the portion just below the gate oxide film 10 carefully. Due to thep-type contact layer 6, the depletion layer is stopped from beingwidened into the p-type base layer 4.

On the other hand, in the case where the p-type counter layer 7 does notexist like the IGBT in the related art, the p-type contact layer 6 needsto have a function as a high concentration layer for preventing thelatch-up. Therefore, the concentration of the p-type contact layer 6 inthe portion just below the n-type source layer 5 needs to be secured soas to be approximately the aforementioned concentration (or sheetresistance).

As a result, the p-type contact layer 6 needs to be formed to beshallower than 1 μm in depth from the bottom of the n-type source layer5, and the end portion of the depletion layer (depletion layer end) isstopped at a position closest to the n-type source layer 5. Since thedistance (herein, less than 1 μm) of the charge neutralization regionbetween the depletion layer end and the n-type source layer 5 isdetermined by implantation efficiency of electrons injected from then-type source layer 5, the distance is desired to be secured as long aspossible.

Therefore, the p-type counter layer 7 is introduced according to thepresent invention, and the p-type counter layer 7 is formed so that theconcentration of acceptors at the depth from the bottom of the n-typesource layer 5, which is shallower than 1 μm, is increased and thep-type counter layer 7 is in contact with the n-type source layer 5. Onthe other hand, the p-type contact layer 6 is formed to the depth wherethe p-type contact layer 6 is slightly deeper than the p-type counterlayer 7 (for example, 1 μm to 2 μm from the surface of the chip) to bewidened to the degree that the p-type contact layer 6 is not engagedwith the inversion layer channel in the transverse direction.

By doing so, in addition to the aforementioned pattern defects (1) to(3), the distance (herein, less than 1 μm) of the charge neutralizationregion between the depletion layer end and the n-type source layer 5 issecured, so that the effect of improving the function of preventing thelatch-up can also be newly obtained.

Fifth Embodiment

Next, a structure of an IGBT according to a fifth embodiment of thepresent invention will be described with reference to FIG. 13. FIG. 13is a cross-sectional view illustrating main components of asemiconductor device according to an embodiment of the presentinvention. FIG. 13 illustrates a cross-sectional view of an IGBTaccording to the fifth embodiment of the present invention. The featureof the fifth embodiment is, as a different point from the firstembodiment, that the p-type counter layer 7 is formed so as to beself-aligned with the contact opening portion 14 of the interlayerinsulating film 9.

Hereinafter, a method of manufacturing the IGBT according to the fifthembodiment of the present invention will be described with reference toFIG. 14. FIG. 14 is a cross-sectional view illustrating a method ofmanufacturing a semiconductor device according to an embodiment of thepresent invention. FIG. 14 illustrates plan views illustrating asequence of processes of manufacturing the IGBT according to the fifthembodiment of the present invention, in which a portion of an activeregion is illustrated to be enlarged. In addition, due to the reasondescribed later, FIG. 14 is illustrated as cross-sectional views takenalong the cutting line of the portion (the ladder portion of the n-typesource layers 5) corresponding to the line C1-C2 illustrated in FIG. 11(d). The processes performed in (a) to (d) of the flow diagramillustrated in FIG. 14 are similar to those of (a) to (d) of FIG. 2described above except for the different point in that the patternedinterlayer insulating film not a resist mask are used as a mask of theboron ion implantation (refer to the arrow 18 in FIG. 14( d)) for thep-type counter layer 7.

First, in the state of FIG. 14( a), with respect to the polysiliconelectrode 11 for the gate and the p-type base layer 4, the boron ionimplantation (refer to the arrow 18 in FIG. 14( a)) is performed byusing the resist 8 as a mask, so that the p-type contact layer 6 isformed. After the resist after the boron ion implantation is removed,thermal treatment may be performed.

Subsequently, as illustrated in FIG. 14( b), the arsenic ionimplantation 19 is performed by using the resist 8 and the polysiliconelectrode 11 as a mask. Subsequently, as illustrated in FIG. 14( c), amask of the resist 8 is formed again, and the arsenic ion implantation19 is performed. At this time, the region where arsenic ions areimplanted is limited to only the ladder portion of the n-type sourcelayer 5 in FIG. 11( d) described in the third embodiment. The process isan important feature of the fifth embodiment. The reason will bedescribed in the stage where other processes are finished. Next, theresist 8 is removed, and thermal treatment is performed, so that then-type source layer 5 is formed.

Next, as illustrated in FIG. 14( d), the interlayer insulating film 9 isformed by performing an LP-CVD method on an oxide film such as PSG orBPSG, and a contact opening portion 14 is formed on the interlayerinsulating film 9 by dry etching or the like using a photolithographymethod. The opening portion becomes a connection region between theemitter electrode (not illustrated) which is to be formed later and then-type source layer 5 and the p-type counter layer 7.

Subsequently, as illustrated in FIG. 14( d), the boron ion implantation(refer to the arrow 18 in FIG. 14( d)) is performed by using thepreviously-formed interlayer insulating film 9 as a mask without newlyperforming a photolithography method. Therefore, boron ions areimplanted only in the contact opening portion 14 of the interlayerinsulating film 9. Subsequently, as illustrated in FIG. 14( e), thermaltreatment (for example, maintaining at 950° C. for one hour) isperformed, so that the p-type counter layer 7 is formed to beself-aligned with the contact opening portion 14 of the interlayerinsulating film 9.

The feature of the fifth embodiment is that the n-type source layer 5formed in the contact opening portion 14 of the interlayer insulatingfilm 9 is configured not to disappear entirely by the compensation ofthe p-type counter layer 7. In the case of the fifth embodiment, theboron ion implantation (refer to the arrow 18 in FIG. 14( d)) of thep-type counter layer 7 is performed by using the interlayer insulatingfilm 9 as a mask. Therefore, if the p-type counter layer 7 is formed soas to prevent the pattern defects (1) to (3), in some cases,concentration compensation occurs due to the p-type layer, and thus, then-type source layer 5 formed in the contact opening portion 14 of theinterlayer insulating film 9 disappears, so that the n-type source layer5 and the emitter electrode may not be in contact (electricalconnection) with each other.

Therefore, the emitter electrode and the n-type source layer 5 areallowed to be in contact with each other in the aforementioned ladderportion of the n-type source layer 5. The concentration (total amount)of donors only in the n-type source layer 5 of the aforementioned ladderportion is configured to be larger than a sum of the total amount of thep-type counter layer 7 and the total amount of the p-type contact layer6 so that the n-type source layer 5 is not cancelled even in the casewhere the boron ion implantation (refer to the arrow 18 in FIG. 14( d))for the p-type counter layer 7 is performed. Therefore, as describedabove, arsenic ions are preferably implanted only in the ladder portion.

As described, although a photolithography process for the arsenic ionimplantation is newly added, in the fifth embodiment, the p-type counterlayer 7 may be formed so as to be self-aligned with the contact openingportion 14 of the interlayer insulating film 9. As a result, in theopening portion, the p-type counter layer 7 is securely in contact withthe emitter electrode, and the n-type source layer 5 exposed in theopening portion disappears except for the ladder portion, so that then-type source layer 5 communicating with the inversion layer channel isformed only in the lower portion of the interlayer insulating film.Therefore, the width of the n-type source layer 5 (the width of thepolysilicon electrode in the transverse direction) can be furtherdecreased, and the resistance component of the vicinity thereof can bereduced, so that it is possible to further improve the effect ofsuppressing the latch-up.

Sixth Embodiment

Next, a structure of an IGBT according to a sixth embodiment of thepresent invention will be described with reference to FIG. 15. FIG. 15is a cross-sectional view illustrating main components of asemiconductor device according to an embodiment of the present inventionand a concentration distribution diagram illustrating a net dopingconcentration of the semiconductor device. FIG. 15( a) illustrates across-sectional view of an IGBT according to the sixth embodiment of thepresent invention, and FIG. 15( b) illustrates net doping concentrationdistribution along cutting lines A1-A2 and B1-B2 illustrated in FIG. 15(a). In FIG. 15( b), the solid line indicates concentration distributionalong the cutting line A1-A2, and in FIG. 15( b), the broken lineindicates concentration distribution along the cutting line B1-B2.

The feature of the sixth embodiment is, as a different point from thefirst embodiment, that a plurality of p-type counter layers are formed.For example, in the case of FIG. 15, three p-type counter layers 7 a, 7b, and 7 c are formed. The p-type contact layer 6 is formed so as to bedeep in the fourth embodiment. However, in the sixth embodiment, aplurality of p-type counter layers 7 are formed in order to prevent theoccurrence of the latch-up by preventing the aforementioned patterndefects (1) to (3).

The total amounts of the plurality of p-type counter layers 7 a, 7 b,and 7 c may be equal to each other or different from each other.Similarly, the formation depths (Rp in ion implantation) of the layersmay be equal to each other or different from each other. In addition,preferably, the sum of the total amounts (doses) of the p-type counterlayers 7 a, 7 b, and 7 c and the depth (Rp) thereof satisfy theaforementioned conditions described in the first embodiment. In thismanner, by forming a plurality of p-type counter layers, the occurrenceof the latch-up caused by the pattern defects can be sufficientlysuppressed.

Seventh Embodiment

Next, a structure of an IGBT according to a seventh embodiment of thepresent invention will be described with reference to FIG. 16. FIG. 16is a cross-sectional view illustrating main components of asemiconductor device according to an embodiment of the presentinvention. FIG. 16 illustrates a cross-sectional view of an IGBTaccording to the seventh embodiment of the present invention.

The feature of the seventh embodiment is, as a different point from thefirst embodiment, that the MOS gate structure is changed from a planargate type to a trench gate type. The p-type base layer 4 having aconcentration higher than that of the n-type drift layer 1 is formed onthe surface of the semiconductor substrate including the n-type driftlayer 1. The n-type source layer 5 having a concentration higher thanthat of the p-type base layer 4 is selectively formed on the surface ofthe p-type base layer 4. Moreover, the p-type contact layer 6 is formedon the p-type base layer 4 so as to be in contact with theselectively-formed n-type source layer 5.

On the other hand, grooves (trenches) are regularly formed on thesurface of the semiconductor substrate, and a gate oxide film 10 isformed on an inner wall of the trench. In addition, the polysiliconelectrode 11 is buried so as to face the surface of each layer of then-type source layer 5, the p-type base layer 4, and the n-type driftlayer 1 through the gate oxide film 10. The polysilicon electrodes 11are integrated onto a chip (not illustrated) to be in contact with thegate electrodes.

In this manner, the trench gate-type MOS gate structure is formed. Next,the p-type counter layer 7 having a concentration higher than that ofthe p-type base layer 4 is formed to be in contact with the n-typesource layer 5, to mostly overlap the p-type contact layer 6, and to beincluded in the p-type base layer 4 in such a range that the p-typecounter layer 7 does not exceed the end of the n-type source layer 5 onthe side facing the gate electrode. The p-type base layer 4 is connectedto the emitter electrode 12.

Moreover, the interlayer insulating film 9 is formed to cover the upperportion of the polysilicon electrode 11, and the interlayer insulatingfilm 9 is opened so that the n-type source layer 5 and the p-typecounter layer 7 are exposed on the upper surface of the p-type baselayer 4. The aforementioned emitter electrode 12 made of aluminum or thelike is formed on the surface of the chip to be electrically connectedto the n-type source layer 5 and the p-type counter layer 7 through theopening portion of the interlayer insulating film 9 described above.

On the other hand, the n-type field stop layer 2 is formed on the lowersurface of the semiconductor substrate to be in contact with the n-typedrift layer 1, and the p-type collector layer 3 is further formed to bein contact with the n-type field stop layer 2, so that the p-typecollector layer 3 is connected to the collector electrode 13 formed onthe outer surface of the lower surface of the semiconductor substrate.

Hereinafter, a method of manufacturing the IGBT according to the fifthembodiment of the present invention will be described with reference toFIG. 17. FIG. 17 is a cross-sectional view illustrating a method ofmanufacturing a semiconductor device according to an embodiment of thepresent invention. FIG. 17 illustrates plan views illustrating asequence of processes of manufacturing the IGBT according to the seventhembodiment of the present invention, in which a portion of an activeregion is illustrated to be enlarged. Since the processes performed in(a) to (d) of the flow diagram illustrated in FIG. 17 are similar tothose of (a) to (d) of FIG. 2 described above, the description of theredundant portions is partially omitted.

First, in the state of FIG. 17( a), with respect to the polysiliconelectrode 11 for the gate and the p-type base layer 4, the boron ionimplantation (refer to the arrow 18 in FIG. 17( a)) is performed byusing the resist 8 as a mask, so that the p-type contact layer 6 isformed. At this time, the p-type contact layer 6 is disposed so as to beseparated from the trench. After the resist after the boron ionimplantation (refer to the arrow 18 in FIG. 17( a)) is removed, thermaltreatment may be performed.

Subsequently, as illustrated in FIG. 17( b), the arsenic ionimplantation 19 is performed by using the resist 8 and the polysiliconelectrode 11 as a mask. Next, the resist 8 is removed, and thermaltreatment is performed, so that the n-type source layer 5 is formed.Subsequently, as illustrated in FIG. 17( c), a mask of the resist 8 isnewly formed, and the boron ion implantation (refer to the arrow 18 inFIG. 17( c)) is performed, so that the p-type counter layer 7 isperformed. After that, as illustrated in FIG. 17( d), the interlayerinsulating film 9 is deposited, and selective etching is performed by aphotolithography method, so that the surface of the p-type base layer 4where the n-type source layer 5 and the p-type counter layer 7 areformed is opened.

As in the seventh embodiment, if the surface pattern is miniaturizedlike the trench gate IGBT, the dimension thereof is relatively smallerthat impurities such as particles or waste, so that the influencethereof to the pattern is increased. In other words, in thecharacteristics of the IGBT chip, likelihood with respect to theimpurities is decreased. Therefore, the occurrence frequency of theaforementioned pattern defects (1) to (3) is also remarkably increased.As described in “Means for Solving Problem”, the large current capacityIGBT module is formed by implementing the IGBT chips from a wafer and byconnecting a plurality of IGBT chips (multi-chips) in parallel.Therefore, the latch-up caused by the aforementioned pattern defects andthe occurrence rate of the switching defect are increased by the amountcorresponding to the number of the IGBT chips in use.

Therefore, if the p-type counter layer according to the presentinvention is applied to the trench gate-type IGBT, the probability ofthe occurrence of the pattern defects per chip is remarkably decreased,so that the defect can be reduced at least down to one of several parts.As a result, similarly, the switching defect in the aforementioned largecurrent capacity IGBT module of the multi-chips is also decreased. Inother words, the effect of the p-type counter layer 7 is increased asthe MOS gate structure on the chip surface is miniaturized.

Eighth Embodiment

Next, a structure of an IGBT according to an eighth embodiment of thepresent invention will be described with reference to FIG. 18. FIG. 18is a cross-sectional view illustrating main components of asemiconductor device according to an embodiment of the presentinvention. FIG. 18 illustrates a cross-sectional view of an IGBTaccording to the eighth embodiment of the present invention.

The feature of the eighth embodiment is, as a different point from theseventh embodiment, that the p-type counter layer 7 is formed to benarrower than the p-type contact layer 6 by using a resist maskdifferent from the p-type contact layer 6. The eighth embodimentcorresponds to the case where the third embodiment of the planargate-type IGBT is applied to a trench gate-type.

Next, a method of manufacturing the IGBT according to the eighthembodiment of the present invention will be described with reference toFIG. 19. FIG. 19 is a plan view illustrating a method of manufacturing asemiconductor device according to an embodiment of the presentinvention. FIG. 19 illustrates plan views illustrating a sequence ofprocesses of manufacturing the IGBT according to the third embodiment,in which a portion of an active region is illustrated to be enlarged.The processes performed in (a) to (d) of the flow diagram illustrated inFIG. 19 are almost the same as (a) to (d) of FIG. 11 described above.

First, in the state of FIG. 19( a), boron ion implantation is performedby using a resist mask, so that the p-type contact layer 6 is formed asillustrated in FIG. 19( b). At this time, the opening portion of theresist mask is configured to be separated from the long-side directionend of the trench including the polysilicon electrode 11 and the gateoxide film 10. Subsequently, arsenic ion implantation is performed byusing a resist mask, so that the n-type source layer 5 is formed asillustrated in FIG. 19( c). At this time, arsenic is introduced into theaforementioned separated portion.

Herein, the n-type source layers 5 are also formed in the short-sidedirection (the up-down direction of the paper) of the polysiliconelectrodes 11 so as to connect the n-type source layers 5 which are incontact with the polysilicon electrodes 11 adjacent to each other. Inthis manner, by allowing the n-type source layers 5 to be patterned on aladder, the region where the emitter electrode and the n-type sourcelayer 5 after the finishing are securely in contact with each other isincreased, so that the effect of reducing contact resistance isobtained.

Subsequently, as illustrated in FIG. 19( d), boron ion implantation isperformed by using a resist mask newly, so that the p-type counter layer7 is formed. At this time, in order that the n-type source layers 5 in ashape of a ladder does not disappear by the compensation of the p-typecounter layers 7, a resist mask for the p-type counter layers 7 is alsoformed in a shape of a ladder, so that boron may not be introduced intothe ladder portion of the n-type source layers 5. In addition, at thistime, the opening portion of the resist mask is configured to beslightly wider than the opening portion of the n-type source layer 5.

In this manner, on the surface, the shapes of the patterns of the resistmasks for ion implantation in the p-type contact layer 6 and the p-typecounter layer 7 are changed, so that the sites are provided where then-type source layer 5 does not disappear due to the p-type counter layer7. As a result, the n-type source layer 5 having a high concentrationcan be additionally formed, so that for example, the contact resistanceof the n-type source layer 5 and the emitter electrode which is to beformed later can be reduced.

Ninth Embodiment

Next, a structure of an IGBT according to a ninth embodiment of thepresent invention will be described with reference to FIG. 20. FIG. 20is a cross-sectional view illustrating main components of asemiconductor device according to an embodiment of the presentinvention. FIG. 20 illustrates a cross-sectional view of an IGBTaccording to the ninth embodiment of the present invention. Asillustrated in FIG. 20, the feature of the ninth embodiment of thepresent invention is, as a different point from the eighth embodiment,that the p-type counter layer 7 is formed so as to be self-aligned withthe contact opening portion 14 of the interlayer insulating film 9.

Next, a method of manufacturing the IGBT according to the fifthembodiment of the present invention will be described with reference toFIGS. 21 and 22. FIGS. 21 and 22 are cross-sectional views illustratinga method of manufacturing a semiconductor device according to anembodiment of the present invention. FIGS. 21 and 22 illustratecross-sectional views illustrating a sequence of processes ofmanufacturing the IGBT according to the ninth embodiment, which arediagrams where a portion of an active region is enlarged. In addition,FIGS. 21 and 22 illustrate cross-sectional views taken along the cuttingline corresponding to the line C1-C2 illustrated in (d) of FIG. 19. Theprocesses performed in (a) to (c) of the flow diagram illustrated inFIG. 21 and (a) and (b) of the flow diagram illustrated in FIG. 22 aresimilar to those of (a) to (d) illustrated in FIG. 17 described aboveexcept for the different main point in that the patterned interlayerinsulating film 9 not a resist mask are used as a mask of the boron ionimplantation for the p-type counter layer 7.

First, in the state of FIG. 21( a), the boron ion implantation (refer tothe arrow 18 in FIG. 21( a)) is performed by using the resist 8 as amask, so that the p-type contact layer 6 is formed as illustrated inFIG. 21( b). After the resist 8 of the boron ion implantation (refer toreference numeral 18 in FIG. 21( a)) is removed, thermal treatment maybe performed.

Subsequently, as illustrated in FIG. 21( b), the arsenic ionimplantation (refer to the arrow 19 in FIG. 21( b)) is performed byusing the resist 8 as a mask. Next, as illustrated in FIG. 21( c), amask of the resist 8 is formed again, and the arsenic ion implantation(refer to the arrow 19 in FIG. 21( c)) is performed. At this time, theregion where arsenic ions are implanted is limited to only the ladderportion (for example, the line C1-C2) of the n-type source layer 5illustrated in FIG. 19( d) described in the eighth embodiment. Next, theresist 8 is removed, and thermal treatment is performed, so that then-type source layer 5 is formed.

Next, as illustrated in FIG. 22( a), the interlayer insulating film 9 isformed by performing an LP-CVD method on a deposited oxide film such asPSG or BPSG, and a contact opening portion 14 is formed on theinterlayer insulating film 9 by dry etching or the like using aphotolithography method. The contact opening portion 14 becomes aconnection region between the emitter electrode (not shown) which is tobe formed later and the n-type source layer 5 and the p-type counterlayer 7.

Subsequently, as illustrated in FIG. 22( a), the boron ion implantation(refer to the arrow 18 in FIG. 22( a)) is performed by using thepreviously-formed interlayer insulating film 9 as a mask without newlyperforming a photolithography method. Therefore, boron ions areimplanted only in the contact opening portion 14 of the interlayerinsulating film 9. Subsequently, as illustrated in FIG. 22( b), thermaltreatment (for example, maintained at 950° C. for one hour) isperformed, so that the p-type counter layer 7 is formed to beself-aligned with the contact opening portion 14 of the interlayerinsulating film 9.

The feature of the ninth embodiment is that the embodiment is useful fordesign miniaturization in such a trench gate structure. As describedabove, the p-type counter layer needs to be formed so as to be securelyin contact with the n-type source layer 5, so as to be deeper than then-type source layer 5, and so as for at least a portion thereof tooverlap the p-type contact layer 6. However, if the design isminiaturized by the trench gate structure, an allowable range ofalignment error between the layers is narrowed. Therefore, the contactopening portion 14 between the p-type counter layer 7 and the emitterelectrode of the interlayer insulating film 9 is misaligned, the holecurrent may not easily flow in the emitter electrode, and thus, theresistance component is increased and the voltage drop is increased,which leads to the occurrence of the latch-up.

Therefore, by allowing the p-type counter layer 7 to be self-alignedwith the contact opening portion 14 of the interlayer insulating film 9,the p-type counter layer 7 can be securely in contact with the emitterelectrode even in the design miniaturization. As a result, it ispossible to further improve the effect of suppressing the latch-up.

Tenth Embodiment

Next, a structure of a MOSFET according to a tenth embodiment of thepresent invention will be described with reference to FIG. 23. FIG. 23is a cross-sectional view illustrating main components of asemiconductor device according to an embodiment of the presentinvention. FIG. 23 illustrates a cross-sectional view illustrating aMOSFET according to the tenth embodiment of the present invention.

The different point from the first embodiment is that a p-type layerdoes not exist on the rear surface and an n-type drain layer 21 is incontact with an electrode (drain electrode 23). In other words, only theelectrons which are majority carriers contribute to the current. Even inthe MOSFET where majority carriers constitute the current, a parasiticbipolar transistor including the n-type source layer 5, the p-type baselayer 4, the n-type drift layer 1, and the n-type drain layer 21 exists.At the time of high voltage turning off, since the depletion layer isdiffused in the most inner portion of the p-type base layer 4, theparasitic bipolar transistor may easily operate.

However, by introducing the p-type counter layer 7 having a highconcentration, the diffusion length of the electrons in the p-typecounter layer 7 is shortened. As a result, similarly to the IGBT, theefficiency of electron injection from the n-type source layer 5 into thep-type counter layer 7 can be reduced. Therefore, the occurrence of thelatch-up caused by the pattern defect can be sufficiently suppressed. Inaddition, the present invention is not limited to the structureillustrated in FIG. 23, but the MOS gate structures according to all theembodiments described above can be applied to the MOSFET.

Eleventh Embodiment

Next, a structure of a MOS gate according to an eleventh embodiment ofthe present invention will be described with reference to FIG. 24. FIG.24 is a cross-sectional view illustrating a semiconductor deviceaccording to an embodiment of the present invention and operations ofthe semiconductor device in the related art. FIG. 24 illustrates across-sectional view illustrating a MOS gate structure according to theeleventh embodiment of the present invention and a structure in therelated art. FIG. 24( a) illustrates a cross-sectional view of a MOSgate structure according to the eleventh embodiment of the presentinvention; FIG. 24( b) illustrates an enlarged cross-sectional view ofan arbitrary one of the p-type base layers 4; FIG. 24( c) illustrates anenlarged cross-sectional view of the vicinity of pn junction between then-type source layer 5 and the p-type counter layer 7; and FIG. 24( d)illustrates a cross-sectional view of a MOS gate structure of asemiconductor device in the related art.

If the p-type counter layer 7 is installed according to the eleventhembodiment of the present invention, particularly as illustrated in thecross-sectional view in FIG. 24( c), the cross-section of the pnjunction between the p-type counter layer 7 and the n-type source layer5 has a shape to be convex to the inside of the n-type source layer 5.The reason why the pn junction is convex to the inside of the n-typesource layer 5 is that a sum of the concentrations per unit area (totalamounts) of the p-type counter layer 7 and the p-type contact layer 6 isincreased so as to be higher than the total amount of the n-type sourcelayer 5.

In other words, this is because the acceptor concentration of theintroduction region of the p-type counter layer 7 cancels the lowconcentration portion of the n-type source layer 5. As illustrated inFIGS. 24( b) and 24(c), the holes introduced into the p-type base layer4 in the turned-off or turned-on state flow into the p-type contactlayer 6 and flows out through the p-type counter layer 7 to the emitterelectrode (not shown) as illustrated in the hole flow 17.

At this time, since the concentration of the formation region of thep-type counter layer 7 is high to a degree that it removes the n-typesource layer 5, the resistance component 16 of the path of the hole flow17 in the p-type counter layer, particularly, the resistance componentof the site along the pn junction is lowered. Therefore, since the holesflow through the site having the lowest resistance, the holes flow outthrough the shortest path to the emitter electrode. On the other hand,in the case of the MOS gate in the related art, only the p-type contactlayer 6 exists, and the concentration thereof is lower than that of thepresent invention.

Therefore, as well known, the n-type source layer 5 has a shape to beconvex to the inside of the p-type contact layer 6 as illustrated inFIG. 24( d). Accordingly, the hole flow 17 of the p-type contact layer 6can be narrowed by the n-type source layers 5 on the two sides, andthus, the magnitude of the resistance component 16 is increased by thecorresponding amount.

Hereinbefore, in the present invention where the p-type counter layer 7is introduced, the voltage drop due to the hole flow 17 becomessufficiently lower than the built-in potential of the pn junction of then-type source layer 5 and the p-type counter layer 7, so that it ispossible to suppress the occurrence of the latch-up. In addition, it ispossible to prevent the aforementioned pattern defects (1) to (3).

INDUSTRIAL APPLICABILITY

In this manner, a semiconductor device and a method of manufacturing thesame according to the present invention are useful as a semiconductordevice where switching destruction caused by process defects is reducedand a method of manufacturing the same and is particularly suitable fora semiconductor device such as an insulated gate semiconductor deviceand a method of manufacturing the same.

EXPLANATIONS OF LETTERS OR NUMERALS

-   -   1, 61: N-type drift layer    -   2: N-type field stop layer    -   3: P-type collector layer    -   4, 64: P-type base layer    -   5, 65: N-type source layer    -   6, 66: P-type contact layer    -   7, 7 a, 7 b, 7 c: P-type counter layer    -   8: Resist    -   9: Interlayer insulating film    -   10: Gate oxide film    -   11: Polysilicon electrode    -   12, 72: Emitter electrode    -   13: Collector electrode    -   14: Contact opening portion    -   16: Resistance component    -   17: Hole flow    -   18: Boron ion implantation    -   19: Arsenic ion implantation    -   21: N-type drain layer    -   23: Drain electrode    -   24: Source electrode    -   26: P-type well layer    -   28: P-type high concentration layer

DRAWINGS [FIG. 1]

-   -   1: n-type DRIFT LAYER    -   2: n-type FIELD STOP LAYER    -   3: p-type COLLECTOR LAYER    -   4: p-type BASE LAYER    -   5: n-type SOURCE LAYER    -   6: p-type CONTACT LAYER    -   7: p-type COUNTER LAYER    -   9: INTERLAYER INSULATING FILM    -   10: GATE OXIDE FILM    -   11: POLYSILICON ELECTRODE    -   12: EMITTER ELECTRODE    -   13: COLLECTOR ELECTRODE

[FIG. 7]

-   -   NET DOPING CONCENTRATION    -   NET DOPING CONCENTRATION    -   DEPTH    -   DEPTH

[FIG. 8]

-   -   NET DOPING CONCENTRATION    -   DEPTH

[FIG. 9]

-   -   NET DOPING CONCENTRATION    -   DEPTH

[FIG. 10]

-   -   NET DOPING CONCENTRATION    -   DEPTH

[FIG. 12]

-   -   NET DOPING CONCENTRATION    -   DEPTH

[FIG. 15]

-   -   NET DOPING CONCENTRATION    -   DEPTH

1. A semiconductor device comprising: a drift layer which includes afirst conductivity type semiconductor substrate; a second conductivitytype base layer which is selectively formed on a surface of a firstprincipal plane of the semiconductor substrate; a first conductivitytype source layer which is selectively formed on a surface of the baselayer; a second conductivity type contact layer which is formed to be incontact with the source layer on the first principal plane side of thebase layer and which has a concentration higher than that of the baselayer; a gate electrode which is formed so as to face the drift layer,the base layer, and the source layer through an insulating film; anemitter electrode which is formed on the first principal plane so as tobe electrically connected to the source layer; and an interlayerinsulating film which is formed on the first principal plane of thesemiconductor substrate to be interposed between the gate electrode andthe emitter electrode so as to insulate the gate electrode and theemitter electrode, wherein the semiconductor device further includes asecond conductivity type counter layer which is formed to be in contactwith the source layer and to overlap the contact layer and which isformed to be shallower than the base layer and to have a highconcentration, and wherein a total doping amount per unit area of thecounter layer is larger than 10% of a total doping amount per unit areaof the contact layer.
 2. The semiconductor device according to claim 1,wherein the total doping amount per unit area of the counter layer islarger than that of the contact layer.
 3. The semiconductor deviceaccording to claim 1, wherein a sum of the total doping amount per unitarea of the counter layer and the total doping amount per unit area ofthe contact layer is larger than that of the source layer.
 4. Thesemiconductor device according to claim 3, wherein the total dopingamount per unit area of the counter layer is larger than that of thesource layer.
 5. The semiconductor device according to claim 1, whereinthe counter layer is formed so as to be self-aligned with a position ofan opening portion of the interlayer insulating film.
 6. Thesemiconductor device according to claim 1, wherein a plurality of thecounter layers are installed.
 7. The semiconductor device according toclaim 1, wherein the semiconductor device is an IGBT.
 8. Thesemiconductor device according to claim 1, wherein the semiconductordevice is a trench gate-type IGBT.
 9. The semiconductor device accordingto claim 1, wherein a shape of a cross section of pn junction betweenthe counter layer and the source layer has a portion which is convex tothe inside of the source layer.
 10. A method of manufacturing thesemiconductor device according to claim 1, the method comprising: afirst process of implanting second conductivity type impurity ions in afirst principal plane of a semiconductor substrate with such a rangethat the contact layer is shallower than a base layer included in thesemiconductor device in order to form the contact layer included in thesemiconductor device; a second process of implanting first conductivitytype impurity ions in the first principal plane with such a range thatthe source layer is shallower than the contact layer in order to formthe source layer included in the semiconductor device after the firstprocess; and a third process of implanting second conductivity typeimpurity ions in the first principal plane with such a range that acounter layer is deeper than the source layer and shallower than thebase layer at a dose which is equal to or larger than 10% of a dose ofthe ion implantation of the first process in order to form the counterlayer included in the semiconductor device after the second process. 11.The method according to claim 10, wherein the dose of ion implantationof the third process is larger than that of the first process.
 12. Themethod according to claim 10, wherein a sum of the dose of ionimplantation of the first process and the dose of ion implantation ofthe third process is larger than that of the second process.
 13. Themethod according to claim 12, wherein the dose of ion implantation ofthe third process is larger than that of the second process.
 14. Themethod according to claim 10, wherein the ion implantation of the thirdprocess is performed by using the interlayer insulating film, where anopening portion is selectively formed, as a mask.
 15. The semiconductordevice according to claim 2, wherein a sum of the total doping amountper unit area of the counter layer and the total doping amount per unitarea of the contact layer is larger than that of the source layer. 16.The method according to claim 11, wherein a sum of the dose of ionimplantation of the first process and the dose of ion implantation ofthe third process is larger than that of the second process.